期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 21, 期 40, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/21/40/405002
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资金
- NCTS
- National Science Council of Taiwan [NSC95-2112M110-022]
- US Department of Energy (USDOE), Office of Basic Energy Sciences [DE-AC02-07CH11358]
Deposition on a Si(100) surface and subsequent self-assembly of In atoms into one-dimensional (1D) atomic chains at room temperature is investigated via kinetic Monte Carlo simulation of a suitable atomistic model. Model development is guided by recent experimental observations in which 1D In chains nucleate effectively exclusively at C-type defects, although In atoms can detach from chains. We find that a monotonically decreasing form of the scaled island size distribution (ISD) is consistent with a high defect density which facilitates persistent chain nucleation even at relatively high coverages. The predominance of heterogeneous nucleation may be attributed to several factors including low surface diffusion barriers, a high defect density, and relatively weak In-In binding.
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