Atomistic modeling of III–V nitrides: modified embedded-atom method interatomic potentials for GaN, InN and Ga1−xInxN

标题
Atomistic modeling of III–V nitrides: modified embedded-atom method interatomic potentials for GaN, InN and Ga1−xInxN
作者
关键词
-
出版物
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 21, Issue 32, Pages 325801
出版商
IOP Publishing
发表日期
2009-07-14
DOI
10.1088/0953-8984/21/32/325801

向作者/读者发起求助以获取更多资源

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now