The use of molecular beam epitaxy for the synthesis of high purity III-V nanowires

The synthesis methods and properties of catalyst-free III-V nanowires with molecular beam epitaxy (MBE) are reviewed. The two main techniques are selective-area epitaxy (SAE) and gallium-assisted synthesis. The excellent structure and ultra-high purity characteristics of the grown nanowires are presented by Raman and photoluminescence spectroscopy.