Transport spectroscopy of single Pt impurities in silicon using Schottky barrier MOSFETs

We investigate low temperature electron transport in silicon Schottky barrier metal-oxide-semiconductor field-effect transistors ( MOSFETs), which consist of PtSi metallic source/drain electrodes. Measurements are made on approximately 23 inversion layers and resonances attributed to single impurities close to the metal/semiconductor interface are observed. We ascribe these impurities to Pt atoms that have diffused into the semiconductor channel from the contacts.