Ferroelectric memristive effect in BaTiO3 epitaxial thin films

Epitaxial BaTiO3 (BTO) films have been grown on Nb-doped SrTiO3 (NSTO) (0 0 1) substrate. The ferroelectric resistive switching effect and memristive behaviours have been observed in Pt/BTO/NSTO heterostructures. It exhibits two resistance states under different polarization, and both current-voltage curves are nonlinear, slightly asymmetric and free of discontinuities, in contrast with what often occurs with other resistive switching devices. In addition, the resistance can be continuously tuned up to 1.3 x 10(5) % by varying pulse voltage amplitudes for the ferroelectric memristor application. Moreover, the device exhibits excellent retention and reproducibility. The above phenomena can be qualitatively explained by considering the modulation of the width and height of the potential barrier at the BTO/NSTO interface by ferroelectric polarization.