Effect of Ti addition on the characteristics of titanium-zinc-tin-oxide thin-film transistors fabricated via a solution process

Thin-film transistors (TFTs) using a TiZnSnO (TZTO) channel layer were fabricated using a sol-gel process. The effect of Ti content on the device performance of the TZTO TFTs was investigated. With increasing content of Ti ions in ZTO, the off-current was significantly decreased and the threshold voltage shifted to the positive bias direction. This is the reason for the fact that the incorporation of Ti results in a reduction in the oxygen vacancy, acting as a carrier source, in the ZTO thin films. The TFT performance with 0.01M Ti exhibited a field-effect mobility (mu(FE)) and an on/off current ratio of 0.52 cm(2) V-1 s(-1) and 4.1 x 10(5), respectively.