期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 44, 期 20, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/44/20/205102
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资金
- JSPS KAKENHI [22350084]
- Grants-in-Aid for Scientific Research [22350084] Funding Source: KAKEN
Solution-processed ambipolar organic field-effect transistors based on dicyanomethylene-substituted quinoidal quaterthiophene derivative [QQT(CN) 4] are fabricated using various gate dielectric materials including cross-linked polyimide and poly-4-vinylphenol. Devices with spin-coated polymeric gate dielectric layers show a reduced hysteresis in their transfer characteristics. Among the insulating polymers examined in this study, a new fluorinated polymer with a low dielectric constant of 2.8 significantly improves both hole and electron field-effect mobilities of QQT(CN)4 thin films to values as high as 0.04 and 0.002 cm(2) V(-1) s(-1). These values are close to the best mobilities obtained in QQT(CN)4 devices fabricated on SiO(2) treated with octadecyltrichlorosilane. The influence of the metal used for source/drain metal electrodes on the device performance is also investigated. Whereas best device performances are achieved with gold electrodes, more balanced electron and hole field-effect mobilities could be obtained using chromium.
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