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Photoluminescence properties of erbium-doped europium thiosilicate

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IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/44/9/095404

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Photoluminescence properties of erbium-doped europium thiosilicate (Eu(2)SiS(4) : Er) are reported. The material is fabricated in powder and on silicon substrates. The luminescence at 1.54 mu m corresponding to the (4)I(13/2)-(4)I(15/2) transition of Er(3+) is observed. Broad absorption of the 4f(7)-4f(6)5d transition of Eu(2+) in the host matrix in 350-500 nm region is used for the excitation of Er(3+). Efficient energy transfer from the host to erbium is realized.

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