期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 43, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/43/3/035403
关键词
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资金
- NSF of China [10874166, 50721061]
- National Basic Research Programme of China [2006CB922005, 2009CB929502]
- key foundation of the China Academy of Engineering Physics [2007A01003]
Transparent and conductive oxide (TCO) films with a cubic perovskite structure, lanthanum-doped strontium stannate LaxSr1-xSnO3 (x = 0-0.15) (LSSO), have been grown epitaxially on SrTiO3(001) substrates by the pulsed laser deposition method. The doping concentration and growth parameters were optimized based on the high-resolution x-ray diffraction and electric transport measurements. We found that the optimum doping level is around x = 0.07, and the epitaxial films can be grown at temperatures as low as 600 degrees C and in atmospheres compatible with many other perovskite oxide films. They are n-type TCO films, showing high optical transmittance in the visible range with a direct allowed band gap of 4.65 eV, and a weak metallic transport behaviour with a low resistivity of similar to 4.0 m Omega cm within 10-300 K. Due to a very close lattice match with the ferroelectric Pb(Zr0.52Ti0.48)O-3 (PZT) and multiferroic BiFeO3 (BFO), all-perovskite LSSO(Pt)PZT(BFO)/LSSO capacitors and p-PZT (<= 20 nm)/n-LSSO [p-BFO (100 nm)/n-LSSO] p-n junctions have also been fabricated and characterized. The square polarization versus electric-field hysteresis loops, good rectifying characteristics, high optical transmittance, as well as the epitaxial growth exhibited by the heterostructures, strongly suggest that the LSSO films are potential candidates for use in transparent thin-film devices.
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