4.6 Article

Strain analysis on freestanding germanium nanocrystals

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IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/42/24/245402

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  1. Board of Research in Nuclear Sciences (BRNS), Department of Atomic Energy (DAE)

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We report on a detailed study of strain in freestanding Ge nanocrystals (NCs) by using x-ray diffraction (XRD) line profile analysis supported by high resolution transmission microscopy (HRTEM) imaging. Freestanding Ge NCs down to similar to 7 nm size are synthesized by using the ball milling technique and investigated regarding the nature of strain. Detailed analysis of size and lattice strain in the NCs reveals that strain is anisotropic in the NCs. NC size and strain anisotropy factor are calculated by taking into consideration a dislocation contrast factor. The analysis further suggests that screw type dislocations are the main contributors to the strain anisotropy and the dislocation density and corresponding strain vary with crystallite size, with a maximum of both quantities for NCs produced after 20 h of milling. Direct evidence for strain caused by dislocations in individual NCs is provided from HRTEM imaging. Relaxation of strain is studied by differential scanning calorimetry, which shows a low temperature heat release at similar to 310 degrees C, clearly indicating a kind of structural relaxation of the strained NCs. The methodology presented here is applicable for embedded as well as freestanding NCs of other materials. Implications of strain on the optical properties of Ge NCs are discussed.

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