期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 42, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/42/12/125102
关键词
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We report all solution-processed high-resolution bottom-contact indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) using a simple surface patterning and dip-casting process. High-resolution nanoparticulate Ag source/drain electrodes and a sol-gel processed IGZO semiconductor were deposited by a simple dip-casting along with a photoresist-free, non-relief-pattern lithographic process. The deposited Ag and IGZO solution can be steered into the desired hydrophilic areas by a low surface energy self-assembled monolayer, resulting in source/drain electrodes and semiconducting layer, respectively. The all solution-processed bottom-contact IGZO TFTs including a channel length of 10 mu m typically showed a mobility range 0.05-0.2 cm(2) V-1 s(-1) with an on/off ratio of more than 10(6).
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