Effect of Ce doping on the microstructure and electrical properties of BiFeO3 thin films prepared by chemical solution deposition

Ce-doped Bi1-xCexFeO3 (BCFOx) thin films with x = 0-0.12 were successfully prepared on SnO2 : F(FTO)/glass substrates by chemical solution deposition. The BCFOx films showed a gradual phase transition from a rhombohedral to a pseudotetragonal structure with increase in the Ce content. The substitution of Bi with Ce greatly reduced the leakage current and the dielectric loss of the BCFOx films, which showed an Ohmic conduction mechanism. The BCFOx films with x = 0.06 exhibited a well squared-shaped P-E hysteresis loop with a remanent polarization (2P(r)) of 92.3 mu C cm(-2) and an improved anti-fatigue characteristic after 10(10) read/write polarization cycles.