期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 42, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/42/4/045419
关键词
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资金
- National Science Council of Taiwan [97-2628-M-018-001-MY3]
In the study, ZrOx films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence and conductivity measurements were used to characterize the films. The authors found that the displacement current of oxygen-rich ZrOx films was smaller than that of oxygen-deficient ZrOx films. According to the experimental results, the authors suggested that donor-like oxygen-vacancy related and crystallographic defects within the ZrOx film controlled carrier flow and resulted in hysteresis-type current-voltage characteristics of indium tin oxide/ZrOx/Au devices.
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