Article
Energy & Fuels
Yujin Jung, Kwan Hong Min, Soohyun Bae, Yoonmook Kang, Hae-Seok Lee, Donghwan Kim
Summary: The study introduces a novel pretreatment grinding (NPTG) technique to address surface defects caused by diamond wire sawing (DWS) technology, providing a solution for surface texturing of multicrystalline silicon wafers. The proposed method is environmentally friendly, cost-effective, and improves the efficiency of solar cells fabricated from DWS multicrystalline silicon wafers.
IEEE JOURNAL OF PHOTOVOLTAICS
(2021)
Article
Engineering, Electrical & Electronic
Kaiyue Wu, Jingnan Liu, Jiacun Wu, Mo Chen, Junxia Ran, Xuexia Pang, Pengying Jia, Xuechen Li, Chenhua Ren
Summary: This article reports a double-mode argon planar plume, which operates in the streamer mode and transits to the filamentary mode. Discharge characteristics and plasma parameters are compared for the two modes, showing that the streamer mode and the filamentary mode correspond to pulsed and humped discharges respectively. Fast photography reveals that the streamer-mode plume is composed of stochastically branching streamers, while the filamentary-mode plume results from a series of moving filaments similar to those in barrier discharge. The filamentary mode has lower excited electron temperature and vibrational temperature, whereas higher electron density and gas temperature, and it achieves better hydrophilicity of polyethylene terephthalate surface.
Article
Physics, Applied
Guanglin Yu, Bangfa Peng, Nan Jiang, Ronggang Wang, Haoyang Sun, Zhengyan Liu, Kefeng Shang, Na Lu, Jie Li
Summary: The plasma characteristics in a DBD device with a rotating dielectric barrier were investigated in this study. The results showed that rotating the barrier improved discharge power and the number of current pulses. The rotation reduced the grayscale standard deviation of the discharge images and resulted in a diffusion distribution of microdischarges. The mechanism of enhancing discharge energy and uniformity was analyzed based on surface charges and electron detachment from space negative charges.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Luying Sun, Yujie Tan, Hui Xu, Ruchen Shu, Zhi Liu, Ruina Zhang, Jianyuan Hou, Renxi Zhang
Summary: A novel photocatalytic functional coating was developed by modifying g-C3N4/TiO2 composites with dielectric barrier discharge (DBD), which exhibited high catalytic performance under solar light. The degradation of xylene released from fluorocarbon coating solvents was studied using g-C3N4/TiO2 composite coatings under simulated solar irradiation. Coatings mixed with 10% DBD-modified g-C3N4/TiO2 showed stable, long-lasting, and significantly higher activity compared to those mixed with unmodified catalyst. 98% of xylene was successfully removed in 2 hours under solar light. SEM, TEM, FT-IR, UV-vis, XPS, and other techniques were used to evaluate the properties of the catalyst samples before and after modification, suggesting improved capture ability and utilization efficiency of solar light.
Article
Physics, Fluids & Plasmas
K. Almazova, A. N. Belonogov, V. V. Borovkov, Z. R. Khalikova, G. B. Ragimkhanov, D. Tereshonok, A. A. Trenkin
Summary: Observations of the early stage of a spark discharge in air at atmospheric pressure in the pin-to-plate geometry under a single high-voltage pulse were conducted. It was found that the interelectrode gap is closed by a large number of microchannels at 20-30 ns, and the start of radial channel expansion begins when the electron concentration reaches its maximum value. Theoretical analysis based on the proposed model revealed plasma-channel properties such as electric field strength, electron temperature, plasma conductivity, and speed of radial spark channel expansion.
PLASMA SOURCES SCIENCE & TECHNOLOGY
(2021)
Article
Materials Science, Multidisciplinary
Ryuta Ichiki, Tomoki Komatsu, Kaito Yakushiji, Kosuke Tachibana, Takashi Furuki, Seiji Kanazawa, Shinji Yoshimura
Summary: The ignition area of a planar dielectric barrier discharge extends beyond the opposite electrode when the ambient temperature increases, even with a small opposite electrode. The creeping discharge around the opposite electrode is not the cause of this extension phenomenon.
RESULTS IN PHYSICS
(2021)
Article
Chemistry, Physical
Gyu Tae Bae, Jae Young Kim, Do Yeob Kim, Eun Young Jung, Hyo Jun Jang, Choon-Sang Park, Hyeseung Jang, Dong Ho Lee, Hyung-Kun Lee, Heung-Sik Tae
Summary: The pin-to-liquid DBD reactor utilizes water as a dielectric barrier for stable and effective treatment of aqueous solutions, showing promising performance in decomposing phosphorus compounds. It could be a standard pretreatment method for decomposing phosphorus compounds in water, comparable to thermochemical pretreatment methods.
Article
Engineering, Environmental
Baowei Wang, Xiaoyan Li, Xiaoxi Wang, Bo Zhang
Summary: The study indicates that using filled dielectric materials can significantly improve the conversion rate and energy efficiency of CO2 decomposition technology, with the filled MgO reactor showing the highest performance.
JOURNAL OF ENVIRONMENTAL CHEMICAL ENGINEERING
(2021)
Article
Physics, Fluids & Plasmas
P. A. Bokhan, P. P. Gugin, M. A. Lavrukhin, D. E. Zakrevsky, I. V. Schweigert
Summary: The characteristics of barrier gas discharge in helium at atmospheric pressure under pulsed excitation conditions were investigated. It was found that increasing the steepness of the excitation pulses had little effect on the discharge current value, but allowed the maintenance of volumetric nature of the current flow. The maximum discharge current was restricted by increased ionization.
PHYSICS OF PLASMAS
(2023)
Article
Chemistry, Analytical
Huifang Sun, Jixin Liu, Xuefei Mao, Chunhui Wang, Yabo Zhao, Yongzhong Qian
Summary: At present, it is a challenge to immediately monitor urinary arsenic for treating arsenic poisoning patients. In this study, a silicon nitride rod was utilized as a sample carrier, electric heater, and high voltage electrode for dielectric barrier discharge vaporization (DBDV). A direct analytical method for arsenic in urine without sample digestion was developed using atomic fluorescence spectrometer (AFS) as a model detector. The optimized method achieved a detection limit of 0.014 μg/L arsenic with favorable precision and accuracy for real sample analysis. This direct sampling DBDV method provides a fast, sensitive, and precise detection of ultratrace arsenic in urine samples.
ANALYTICA CHIMICA ACTA
(2023)
Article
Chemistry, Multidisciplinary
Sen Li, Jiazhen Sun, Rui Sun, Jie Pan, Lin Wang, Chen Chen, Qiang Chen, Zhongwei Liu
Summary: This paper investigates the radio frequency dielectric barrier discharge using argon at atmospheric pressure. It observed alpha mode and gamma mode discharges, and analyzed the luminescence intensity at different locations in the discharge gap. It was found that in gamma mode, the negative glow appears with a delay of 13 +/- 1 ns compared to the electron avalanche in alpha mode.
APPLIED SCIENCES-BASEL
(2021)
Article
Physics, Applied
Abdulkadir Yayci, Tim Dirks, Friederike Kogelheide, Miguel Alcalde, Frank Hollmann, Peter Awakowicz, Julia E. Bandow
Summary: This study delves into plasma-driven biocatalysis using enzymes, finding that specific immobilization methods can effectively protect enzyme activity, while chemical scavengers and chaperone proteins did not prolong enzyme lifespan.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Seungryul Yoo, Dong Chan Seok, Kang Il Lee, Yong Ho Jung, Yong Sup Choi
Summary: The study showed that the addition of NF3 in the He:NF3:O-2 mixed gas plasma increased the etch depth and rate of SiC wafers while suppressing surface roughening. The introduction of O-2 had a varying effect on the surface roughness, depending on the amount of NF3 mixed in the plasma.
Article
Engineering, Environmental
Zhuowei Cheng, Miaomiao Qu, Dongzhi Chen, Jianmeng Chen, Jianming Yu, Shihan Zhang, Jiexu Ye, Jun Hu, Jiade Wang
Summary: This study investigated the production and mechanism of active substances in dielectric barrier discharge reactions in different reaction atmospheres. The interactions between different active substances were found to have synergistic or inhibitory effects. Experiments showed that the removal of chlorobenzene by plasma in air atmosphere was affected by the presence of various active substances.
ENVIRONMENTAL SCIENCE & TECHNOLOGY
(2021)
Article
Engineering, Environmental
Shuo Zhang, Zhen Liu, Shuran Li, Shihao Zhang, Hui Fu, Xuan Tu, Wenyi Xu, Xing Shen, Keping Yan, Ping Gan, Xiujuan Feng
Summary: This study proposed a fluidization-like dielectric barrier discharge (DBD) plasma technology for the remediation of lindane contaminated soil. The research integrated physical and chemical reactions and investigated the effects of soil particles on electric features. The results showed high lindane decomposition rate and reaction efficiency with the pulse power drove fluidization-like DBD after 32 minutes treatment.
JOURNAL OF HAZARDOUS MATERIALS
(2023)
Article
Chemistry, Physical
Doo San Kim, Yun Jong Jang, Ye Eun Kim, Hong Seong Gil, Hee Ju Kim, You Jin Ji, Hyung Yong Kim, In Ho Kim, Myoung Kwan Chae, Jong Chul Park, Geun Young Yeom
Summary: In this study, a dual exhaust system was implemented in a reactive ion beam etcher (RIBE) to control the radical flux relative to ion flux during the etching process. The additional exhausting of radicals through the inductively coupled plasma (ICP) source chamber decreased both the ICP source chamber pressure and the ratio of radical flux to ion flux. This control of the radical flux is believed to be beneficial for anisotropic etching of nanoscale features in the next generation RIBE.
APPLIED SURFACE SCIENCE
(2022)
Article
Nanoscience & Nanotechnology
Gyo Wun Kim, Won Jun Chang, Ji Eun Kang, Hee Ju Kim, Geun Young Yeom
Summary: This study compared the radiation damage to EUV resist during etching of hardmask materials using CF4 gas between neutral beam etching (NBE) and ion beam etching (IBE). The results showed that NBE reduced the line edge roughness increase and critical dimension change of EUV resist compared to IBE. NBE also had a lower root mean square surface roughness value of EUV resist and higher etch selectivity for materials such as Si3N4 and SiO2 over EUV resist.
Article
Chemistry, Physical
Dain Sung, Long Wen, Hyunwoo Tak, Hyejoo Lee, Dongwoo Kim, Geunyoung Yeom
Summary: The etching properties of C6F6/Ar/O-2 in ICP and CCP systems were evaluated. In the ICP system, lower O-2/C6F6 ratio and higher SiO2 etch rate were required, while in the CCP system, tapered SiO2 etch profiles were observed.
Article
Nanoscience & Nanotechnology
Ki Seok Kim, Ji Eun Kang, Peng Chen, Sungkyu Kim, Jongho Ji, Geun Young Yeom, Jeehwan Kim, Hyun S. Kum
Summary: Epitaxial lift-off techniques are important for the fabrication of lightweight and flexible devices. This study presents a new approach, using direct growth of thick graphene on the target substrate followed by atomic layer etching, to improve the yield and quality of remote epitaxy.
Article
Chemistry, Multidisciplinary
Seunghwan Seo, Jeong-Ick Cho, Kil-Su Jung, Maksim Andreev, Ju-Hee Lee, Hogeun Ahn, Sooyoung Jung, Taeran Lee, Byeongchan Kim, Seojoo Lee, Juncheol Kang, Kyeong-Bae Lee, Ho-Jun Lee, Ki Seok Kim, Geun Young Yeom, Keun Heo, Jin-Hong Park
Summary: Multi-valued logic (MVL) technology has been reconsidered due to the need for greater power saving in current binary logic systems. This study reports a reconfigurable m-NDR device with electric-field-induced tunability of multiple threshold voltages. The m-NDR phenomenon is achieved by modulating the resistance of the ReS2 layer using electrical pulses. The reconfigurability of the device is demonstrated in MVL circuits composed of the m-NDR device and a load transistor.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Physical
Hee Ju Kim, Long Wen, Doo San Kim, Ki Hyun Kim, Jong Woo Hong, Won Jun Chang, Soo Namgoong, Dong Woo Kim, Geun Young Yeom
Summary: The etch characteristics of silicon trenches masked with various SiO2/Si3N4 pattern distances were investigated using different pulse modes in Ar/Cl-2 inductively coupled plasmas. The results showed that using synchronously and asynchronously pulse modes instead of continuous wave (CW) mode increased the selectivity between Si and the mask layer and reduced the etch rate differences between wide and narrow pattern distance patterns (ARDE). The improvements in etch selectivity and reduction of ARDE were attributed to the increased conduction of Cl radicals/byproducts and time separated etch cycle composed of Cl chemical adsorption and removal of chemisorbed species.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Physical
Hyun Woo Tak, Hye Joo Lee, Long Wen, Byung Jin Kang, Dain Sung, Jeong Woon Bae, Dong Woo Kim, Wonseok Lee, Seung Bae Lee, Keunsuk Kim, Byeong Ok Cho, Young Lea Kim, Han Dock Song, Geun Young Yeom
Summary: In this study, the effects of chemical branch structure on plasma characteristics and etch characteristics of high aspect ratio ACL patterned SiO2 were investigated using three isomers with the same chemical composition. The results showed that the chemical branch structure significantly influenced the plasma properties and etch characteristics, even with the same chemical composition.
APPLIED SURFACE SCIENCE
(2022)
Article
Nanoscience & Nanotechnology
Doo San Kim, Yun Jong Jang, Ye Eun Kim, Hong Seong Gil, Byeong Hwa Jeong, Geun Young Yeom
Summary: In this study, atomic layer etching (ALE) process was used to precisely etch Sn for the fabrication of next generation extreme ultraviolet (EUV) mask. Optimized ALE conditions were identified to control the etch thickness of Sn and achieve high etch selectivity over the capping layer Ru, with minimal physical and chemical damage.
Article
Chemistry, Physical
You Jin Ji, Hae In Kim, Ki Hyun Kim, Ji Eun Kang, Doo San Kim, Ki Seok Kim, A. R. Ellingboe, Dong Woo Kim, Geun Young Yeom
Summary: In this study, the characteristics of PEALD SiNx films deposited at low temperatures were investigated. The use of a floating multi-tile electrode resulted in films with higher growth rate, higher N/Si ratio, lower surface roughness, and higher conformality. The electrical properties of the SiNx films deposited with the floating multi-tile electrode also showed improvement.
SURFACES AND INTERFACES
(2022)
Article
Materials Science, Coatings & Films
Ye Eun Kim, Doo San Kim, Yun Jong Jang, Hong Seong Gil, Ho Seop Jeon, Jong Woo Hong, In Ho Kim, Cheol Kim, Jeong-Heon Park, Geun Young Yeom
Summary: Rf-biased reactive ion beam etching (RIBE) with a H-2:NH3 gas mixture was used to etch CoFeB and MgO in the magnetic tunnel junction (MTJ) layer of magnetic random access memory. The etch selectivity of MTJ materials was increased with H-2 percentage in the gas mixture, and the etch rates were highest between 2:1 and 1:1 ratio of H-2:NH3 due to the synergy effect of H-2 and NH3. High rf-biasing during RIBE increased etch rates but decreased etch selectivities, while small rf-biasing improved etch characteristics such as higher selectivity, improved anisotropy, and thinner sidewall residue. The addition of small rf-biasing increased chemical etching effect without increasing physical sputtering effect, and also eliminated substrate charging.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2023)
Article
Engineering, Electrical & Electronic
Jong Woo Hong, Hyun Min Cho, Yu Gwang Jeong, Da Woon Jung, Yun Jong Yeo, Ji Eun Kang, Hee Ju Kim, Hyun Woo Tak, Geun Young Yeom, Dong Woo Kim
Summary: A study was conducted on the dry etching of indium tin oxide (ITO) using novel hydrocarbon gases mixed with Ar, such as ethane and propane. The results showed that these gases increased the etch rate and selectivity of ITO, and reduced dimensional loss. The etch residues formed during the process could be successfully removed using H2/Ar plasma.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Nanoscience & Nanotechnology
Hyunseok Kim, Yunpeng Liu, Kuangye Lu, Celesta S. Chang, Dongchul Sung, Marx Akl, Kuan Qiao, Ki Seok Kim, Bo-In Park, Menglin Zhu, Jun Min Suh, Jekyung Kim, Junseok Jeong, Yongmin Baek, You Jin Ji, Sungsu Kang, Sangho Lee, Ne Myo Han, Chansoo Kim, Chanyeol Choi, Xinyuan Zhang, Hyeong-Kyu Choi, Yanming Zhang, Haozhe Wang, Lingping Kong, Nordin Noor Afeefah, Mohamed Nainar Mohamed Ansari, Jungwon Park, Kyusang Lee, Geun Young Yeom, Sungkyu Kim, Jinwoo Hwang, Jing Kong, Sang-Hoon Bae, Yunfeng Shi, Suklyun Hong, Wei Kong, Jeehwan Kim
Summary: Multiple compound semiconductor membranes can be produced from a single wafer by directly growing two-dimensional materials on III-N and III-V substrates and then harvesting each epilayer through layer-by-layer mechanical exfoliation. This high-throughput layer transfer technique eliminates time-consuming processes and has the potential to greatly reduce manufacturing costs. The atomic-precision exfoliation at the 2D interface allows for the recycling of wafers for subsequent membrane production.
NATURE NANOTECHNOLOGY
(2023)
Article
Materials Science, Multidisciplinary
Jong Woo Hong, Yeon Hee Kim, Hee Ju Kim, Hyun Woo Tak, Ki Deok Bae, Jeong Yub Lee, Hae Soo Bae, Yong Su Kim, Geun Young Yeom
Summary: TiO2 meta materials with high aspect ratio pillars of different widths were etched using various plasma techniques. The results showed that the etch rates decreased in the order of continuous wave, bias pulsing, synchronous pulsing, and asynchronous pulsing conditions. However, the etch selectivities over ACL and SiO2 and the aspect ratio dependent etching (ARDE) effect improved in that same order. The improvement in ARDE effect was attributed to the decreased compositional differences between wide and narrow TiO2 pattern areas, especially under the asynchronous pulse condition.
Article
Nanoscience & Nanotechnology
Jong Woo Hong, Hyun Woo Tak, Young Hun Choi, Hee Jung Kim, Dong Woo Kim, Geun Young Yeom
Summary: Adding 50% CF3I into C4F8/Ar/O-2 gas mixtures resulted in both high etch selectivity over mask materials and potentially reduced etch damage.
SCIENCE OF ADVANCED MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Ki Seok Kim, Ki Hyun Kim, Ji Eun Kang, Ju-Hee Lee, You Jin Ji, Geun Young Yeom
Summary: In order to solve the contact resistance issue at the interface between metal electrodes and 2D semiconductors, researchers successfully removed the top sulfur layer and achieved the transition from semiconductor to metal in a two-dimensional transition-metal dichalcogenide material. By atomic doping, they were also able to transform the material to the p-type state. This atomic rearrangement technology shows potential in overcoming the limitations of advanced 2D semiconductors in electronic and optoelectronic devices.
ACS APPLIED ELECTRONIC MATERIALS
(2022)