4.6 Article

Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal-organic precursors doped p-type ZnO layer grown by MOCVD technology

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IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/41/19/195110

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资金

  1. NSFC [60576054, 50532080]
  2. China Postdoctoral Science Foundation [20070411069]
  3. Dalian University of Technology
  4. Ministry of Education of China [20070141017]
  5. Natural Science Foundation of LiaoNing Province [20072178]
  6. MEMS
  7. State Key Laboratory for High Performance Ceramics and Superfine Microstructure [SKL200802SIC]

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An n-ZnO/p-ZnO : Sb homojunction light emitting diode was fabricated on c-plane sapphire by metal-organic chemical vapour deposition (MOCVD). The p-type ZnO layer with a hole concentration of 1.27 x 10(17) cm(-3) was fabricated using trimethylantimony (TMSb) as the Sb doping source. The current-voltage characteristics of the device exhibited a desirable rectifying behaviour with a turn-on voltage of 3.3V. Distinct electroluminescence with ultraviolet and visible emissions was detected from this device under forward bias at room temperature. Moreover, metal-organic source TMSb is an effective and controllable dopant in the MOCVD technique, which is suitable for further industrialized production.

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