Improved position sensitive detectors using high resistivity substrates

Position sensitive detectors (PSDs) have the advantage of being single continuous devices with dead zones unlike other types of optical sensors that must be arrayed to produce large area devices. An important aspect of using PSDs is the simplicity of implementing the devices in most applications, i.e. there is no requirement for additional electronics to read electronic output or for obtaining information over large areas. To this end it is advantageous for devices to produce large sensitivities and which can be fabricated using simple, reproducible techniques. This paper will report on a series of Schottky barrier crystalline silicon devices which display markedly higher sensitivities compared with those Studied in most other research work now being concentrated on PECVD amorphous Silicon Structures. In this work, results from devices fabricated front substrates with a range of resistivities and various Schottky metals are presented. Some of the sensitivity measurements obtained were better than 25 mV mm(-1), among some of the best sensitivities reported for Schottky barrier crystalline PSDs. These results were obtained alongside excellent linearities. Devices were also tested under a range of light beams including very low light levels of broadband white light ranging from 0.1 up to 10 mW.