期刊
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
卷 73, 期 5, 页码 674-682出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2012.01.014
关键词
Semiconductors; Crystal growth; Photoelectron spectroscopy; Electronic structure
资金
- Russian Foundation for Basic Research (RFBR) [11-02-00817a]
- grant 34 SB RAS
X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated (001) surfaces of KPb2Br5, K0.5Rb0.5Pb2Br5, and RbPb2Br5 single crystals grown by the Bridgman method have been measured and fundamental absorption edges of the ternary bromides have been recorded in the polarized light at 300 K and 80 K. The present X-ray photoelectron spectroscopy (XPS) results reveal high chemical stability of (001) surfaces of KxR1-xPb2Br5 (x=0, 0.5, and 1.0) single crystals. Substitution of potassium for rubidium in KxR1-xPb2Br5 does not cause any changes of binding energy values and shapes of the XPS constituent element core-level spectra. Measurements of the fundamental absorption edges indicate that band gap energy, E-g, increases by about 0.14 and 0.19 eV when temperature decreases from 300 K to 80 K in KPb2Br5 and RbPb2Br5, respectively. Furthermore, there is no dependence of the E-g value for KPb2Br5 upon the light polarization, whilst the band gap energy value for RbPb2Br5 is bigger by 0.03-0.05 eV in the case of Ellc compared to those in the cases of E parallel to a and E parallel to b. (C) 2012 Elsevier Ltd. All rights reserved.
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