期刊
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
卷 69, 期 9, 页码 2195-2198出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2008.03.039
关键词
Organic compounds; Semiconductors; Transport properties; Surface properties
Recent experiments have demonstrated that the performances of organic FETs strongly depend on the dielectric properties of the gate insulator. In particular, it has been shown that the temperature dependence of the mobility evolves from a metallic-like to an insulating behavior upon increasing the dielectric constant of the gate material. This phenomenon can be explained in terms of the formation of small polarons, due to the polar interaction of the charge carriers with the phonons at the organic/dielectric interface. Building on this model, the possible consequences of the Coulomb repulsion between the carriers at high concentrations are analyzed. (C) 2008 Elsevier Ltd. All rights reserved.
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