期刊
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 4, 期 1, 页码 121-126出版社
AMER CHEMICAL SOC
DOI: 10.1021/jz301975v
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资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2012R1A1A1011302]
- Hanbat National University
- National Research Council of Science & Technology (NST), Republic of Korea [2E24002] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2012R1A1A1011302] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We investigate the electronic band structures of Ge/Si core-shell nanowires (CSNWs) and devise a way to realize the electron quantum well at Ge core atoms with first-principles calculations. We reveal that the electronic band engineering by the quantum confinement and the lattice strain can induce the type-I/II band alignment transition, and the resulting type-I band alignment generates the electron quantum well in Ge/Si CSNWs. We also find that the type-I/II transition in Ge/Si CSNWs is highly related to the direct to indirect band gap transition through the analysis of charge density and band structures. In terms of the quantum confinement, for [100] and [111] directional Ge/Si CSNWs, the type-I/II transition can be obtained by decreasing the diameters, whereas a [110] directional CSNW preserves the type-II band alignment even at diameters as small as 1 nm. By applying a compressive strain on [110] CSNWs, the type-I band alignment can be formed. Our results suggest that Ge/Si CSNWs can have the type-I band alignment characteristics by the band structure engineering, which enables both n-type and p-type quantum-well transistors to be fabricated using Ge/Si CSNWs for high-speed logic applications.
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