4.8 Article

Enhanced Raman Spectroscopy of Nanostructured Semiconductor Phonon Modes

期刊

JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 2, 期 6, 页码 671-674

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jz2001562

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资金

  1. NSFC of P. R. China [20573041, 20773044]
  2. Program for Changjiang Scholars and Innovative Research Team in University [IRT0422]
  3. Program for New Century Excellent Talents in University
  4. 111 Project [B06009]
  5. National Institute of Justice, U.S. Department of Justice [2006-DN-BX-K034]
  6. Division Of Human Resource Development
  7. Direct For Education and Human Resources [833180] Funding Source: National Science Foundation

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We report the observation of enhanced Raman intensity of the phonon modes of nanosized semiconductor particles induced by adsorption of various molecules. This is in contradistinction to surface-enhanced Raman spectroscopy (SERS), in which the Raman lines of an adsorbate are enhanced by proximity to either a metal or semiconductor nanoparticle. We report on enhancements of phonon modes in nanostructured and quantum dots of TiO2, as well as quantum dots of ZnO and PbS. Because plasmon resonances in semiconductor systems are far in the IR, it is likely that some combination of interband and charge-transfer resonances is responsible for the observed enhancement.

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