期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 118, 期 27, 页码 14860-14865出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp412690h
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资金
- U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) [DE-SC0010324]
- National Science Foundation (NSF) [DMR-1056861]
- National Science Foundation (NSF) through the Penn State MRSEC Center for Nanoscale Science [DMR-0820404]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1056861] Funding Source: National Science Foundation
- U.S. Department of Energy (DOE) [DE-SC0010324] Funding Source: U.S. Department of Energy (DOE)
Recent electrical measurements have accessed transport in the topological surface state band of thin exfoliated samples of Bi2Se3 by removing the bulk n-type doping by contact with thin films of the molecular acceptor F-4-TCNQ: Here we report on the film growth and interfacial electronic characterization of F-4-TCNQ grown on Bi2Se3. Atomic force microscopy shows wetting layer formation followed by 3D island growth. X-ray photoelectron spectroscopy is consistent with this picture and also shows that charge transferred to the molecular layer is localized on nitrogen atoms. Ultraviolet photoelectron spectroscopy shows a work function increase and an upward shift of the valence band edge that suggest significant reduction in carrier density at the Bi2Se3 surface.
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