Ultrathin Chemical Vapor Deposition (CVD)-Grown Hexagonal Boron Nitride as a High-Quality Dielectric for Tunneling Devices on Rigid and Flexible Substrates

标题
Ultrathin Chemical Vapor Deposition (CVD)-Grown Hexagonal Boron Nitride as a High-Quality Dielectric for Tunneling Devices on Rigid and Flexible Substrates
作者
关键词
-
出版物
Journal of Physical Chemistry C
Volume 118, Issue 6, Pages 3340-3346
出版商
American Chemical Society (ACS)
发表日期
2014-01-18
DOI
10.1021/jp410874z

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