4.8 Article

Growth of Metal Phthalocyanine on Deactivated Semiconducting Surfaces Steered by Selective Orbital Coupling

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PHYSICAL REVIEW LETTERS
卷 115, 期 9, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.115.096101

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资金

  1. U.S. Department of Energy Office of Science Early Career Research Program through the Office of Basic Energy Sciences [DE-SC0006400]
  2. Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy
  3. Materials Sciences and Engineering Divisions, Office of Basic Energy Sciences, U.S. Department of Energy
  4. Office of Science of the U.S. Department of Energy [DE-AC02-05CH11231]
  5. U.S. Department of Energy (DOE) [DE-SC0006400] Funding Source: U.S. Department of Energy (DOE)

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Using scanning tunneling microscopy and density functional theory, we show that the molecular ordering and orientation of metal phthalocyanine molecules on the deactivated Si surface display a strong dependency on the central transition-metal ion, driven by the degree of orbital hybridization at the heterointerface via selective p -d orbital coupling. This Letter identifies a selective mechanism for modifying the molecule-substrate interaction which impacts the growth behavior of transitionmetal- incorporated organic molecules on a technologically relevant substrate for silicon-based devices.

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