Light-Dressing Effect in Laser-Assisted Elastic Electron Scattering by Xe

The light-dressing effect in Xe atoms was identified in laser-assisted elastic electron scattering (LAES) signals. In the angular distribution of LAES signals with energy shifts of +/-(h) over barw recorded by the scattering of 1 keV electrons by Xe in an intense nonresonant laser field, a peak profile appeared at small scattering angles (<0.5 degrees). This peak was interpreted as evidence of the light dressing of Xe atoms induced by an intense laser field on the basis of a numerical simulation in which the light-dressing effect is included.