期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 117, 期 28, 页码 14485-14492出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp4018162
关键词
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资金
- National Science Foundation Grant [CHE-1214152]
- NSF American Competitiveness in Chemistry postdoctoral fellowship [CHE-0937048]
- Direct For Mathematical & Physical Scien
- Division Of Chemistry [1214152] Funding Source: National Science Foundation
The electronic and photovoltaic properties of junctions between the conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT) and Si(1 1 1) surfaces have been investigated for a range of doping types, doping levels, and surface functionalization of the Si. PEDOT-poly(styrenesulfonate) (PSS) formed ohmic, low resistance contacts to H-terminated and CH3-terminated p-type Si(1 1 1) surfaces. In contrast, PEDOT formed high barrier height (0.8-1.0 V) contacts to n-Si(1 1 1) surfaces, with CH3-terminated n-Si(1 1 1)/PEDOT contacts showing slightly higher barrier heights (1.01 eV) than H-terminated n-Si(1 1 1)/PEDOT contacts (0.89 V). PEDOT contacts to CH3-terminated and H-terminated n-Si(1 1 1) surfaces both produced photovoltages under illumination in accord with the Shockley diode limit based on bulk/recombination diffusion in the semiconductor. Such devices produced solar energy-conversion efficiencies of 5.7% under 100 mW cm(-2) of simulated air mass 1.5 illumination. The electrical properties of PEDOT contacts to CH3-terminated Si surfaces were significantly more stable in an air ambient than the electrical properties of PEDOT contacts to H-terminated Si surfaces. PEDOT films produced a low resistance, tunnel-barrier type of ohmic contact to n(+)-Si(1 1 1) surfaces. Hence, through various combinations of doping type, doping level, and surface functionalization, the PEDOT/Si contact system offers a wide range of opportunities for integration into monolithic photovoltaic and/or artificial photosynthetic systems.
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