Doped GNR p–n Junction as High Performance NDR and Rectifying Device

标题
Doped GNR p–n Junction as High Performance NDR and Rectifying Device
作者
关键词
-
出版物
Journal of Physical Chemistry C
Volume 116, Issue 34, Pages 18064-18069
出版商
American Chemical Society (ACS)
发表日期
2012-08-07
DOI
10.1021/jp304582k

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