4.6 Article

Defect Engineering in CdSxSe1-x Nanobelts: An Insight into Carrier Relaxation Dynamics via Optical Pump-Terahertz Probe Spectroscopy

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JOURNAL OF PHYSICAL CHEMISTRY C
卷 116, 期 49, 页码 26036-26042

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AMER CHEMICAL SOC
DOI: 10.1021/jp307864d

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Defects in nanomaterials often induce dramatic changes in the photoelectrical properties of semiconducting II-VI compound nanomaterials. The relationship between defects and carrier dynamics is pivotal in material engineering for potential applications. A thorough understanding of the dynamics of defect-related free carrier depletion is particularly important for the fabrication and optimization of nano-optoelectronic devices. In this work, optical pump-terahertz probe spectroscopy was employed to investigate the carrier dynamics in CdS and Se-alloyed CdS nanobelts. The dynamics are dominated by the surface defect trapping in the case of CdS and structural-defect-related recombination for the Se-alloyed CdS. The conclusion is also supported by temperature-dependent photoluminescence spectroscopic studies. Our results indicate that congeneric element replacement is an effective approach for defect-distribution restructuring, which modifies the physical properties of nanomaterials through defect engineering.

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