期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 116, 期 18, 页码 10181-10185出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp210062x
关键词
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资金
- National Science Council, Taiwan [NSC 98-2119-M-002-020-, 99-2119-M-002-012-, NSC 99-2120-M-003-001-]
In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.
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