On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface

标题
On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface
作者
关键词
-
出版物
Journal of Physical Chemistry C
Volume 116, Issue 1, Pages 947-952
出版商
American Chemical Society (ACS)
发表日期
2011-11-18
DOI
10.1021/jp2094802

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