Electronic transport behavior of bismuth nanotubes with a predesigned wall thickness

Bismuth nanotubes (BiNTs) were synthesized by electrodeposition inside the nanochannels of an anodic aluminum oxide template coated with a thin mesh-like Au layer onto one planar surface side. By tuning the Art layer thickness and current. density during electrodeposition, BiNTs with a predesigned wall thickness and with a wall thickness variation along the axis were achieved. Measurements of resistance - temperature demonstrate that BiNTs show a semiconducting electronic transport behavior, and the resistance of BiNTs with thinner walls shows a larger temperature dependence than that of BiNTs with thick walls. Our approach could be used to build other materials that can be obtained via electrodeposition into nanotubes with a designed wall thickness that might have potential in future nanotechnology.