JSR EUV Resist Development toward 22nmhp Design and Beyond

In order to achieve targeted resist performance for EUV in practical applications, we have developed new materials such as molecular glass (MG), PAG, and acid amplifiers (AA). Protected NORIA, a molecular glass, was examined for extending resolution limits. The resist with protected NORIA showed 22 nm hp resolutions under EUV exposure. PAG acid diffusion effect on LWR was also investigated. It was found that acid diffusion control was one of the most important factors for LWR improvement. To improve sensitivity, application of AA (acid amplifier) was investigated. The resist with AA gained 25% sensitivity improvement over the original formulation. Elemental technologies for major progress of EUV resist were made.