4.6 Article

Hydrogen centers and the conductivity of In2O3 single crystals

期刊

PHYSICAL REVIEW B
卷 91, 期 7, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.91.075208

关键词

-

资金

  1. National Science Foundation (NSF) [DMR 1160756]
  2. NSF Research Experiences for Undergraduates (REU) Program [PHY-0849416]
  3. Humboldt Foundation
  4. U.S. Department of Energy, Basic Energy Sciences, Materials Science and Technology Division
  5. NSF [EPMD 1159682]
  6. Div Of Electrical, Commun & Cyber Sys
  7. Directorate For Engineering [1159682] Funding Source: National Science Foundation

向作者/读者索取更多资源

A series of infrared absorption experiments and complementary theory have been performed to determine the properties of OH and OD centers in In2O3 single crystals. Annealing In2O3 samples in H-2 or D-2 at temperatures near 450 degrees C produces an n-type layer approximate to 0.06mm thick with an n-type doping of 1.6 x 10(19) cm(-3). The resulting free-carrier absorption is correlated with an OH center with a vibrational frequency of 3306 cm(-1) that we associate with interstitial H+. Additional O-H (O-D) vibrational lines are assigned to metastable configurations of the interstitial H+ (D+) center and complexes of H (D) with In vacancies. Unlike other oxides studied recently where H trapped at an oxygen vacancy is the dominant shallow donor (ZnO and SnO2, for example), interstitial H+ is found to be the dominant H-related shallow donor in In2O3.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

Article Engineering, Electrical & Electronic

Evaluation of dry stored disposable sensor strip on rapid SARS-CoV-2 detection platform

Chao-Ching Chiang, Chan-Wen Chiu, Fan Ren, Cheng-Tse Tsai, Yu-Te Liao, Josephine F. Esquivel-Upshaw, Stephen J. Pearton

Summary: This study presents a SARS-CoV-2 virus detection mechanism using stored disposable strips. The accuracy of this sensing platform is comparable to PCR and provides results in less than 30 seconds. The disposable strips, biofunctionalized with SARS-CoV-2 antibodies, detect the virus in saliva samples, and the detected signals are amplified and displayed on an LCD screen. The system demonstrates the ability to show qualitative results within 30 seconds and quantitative concentrations in 5 minutes.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2023)

Article Engineering, Electrical & Electronic

High sensitivity CIP2A detection for oral cancer using a rapid transistor-based biosensor module

Minghan Xian, Jenna L. Stephany, Chan-Wen Chiu, Chao-Ching Chiang, Fan Ren, Cheng-Tse Tsai, Siang-Sin Shan, Yu-Te Liao, Josephine F. Esquivel-Upshaw, Stephen J. Pearton

Summary: Oral squamous cell carcinoma is a common type of lip and oral cavity cancer, which requires early detection for improved survival rates. A modular biological sensor utilizing transistor-based technology has been developed for rapid and accurate point of care detection of the cancer, providing opportunities for quick clinical diagnosis.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2023)

Article Physics, Applied

Ultrafast, room temperature rejuvenation of SiC Schottky diodes from forward current-induced degradation

Md Abu Jafar Rasel, Nahid Sultan Al-Mamun, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen J. Pearton

Summary: In this work, we illustrate the rejuvenation of degraded Ti/4H-SiC Schottky barrier diodes at room temperature within seconds by utilizing high-energy electron interactions with defects. By applying high current density electrical pulsing with low frequency and duty cycle to suppress temperature rise, we successfully decrease defect concentration and improve device performance beyond the pristine condition. The ultrafast and room temperature process has the potential to rejuvenate electronic devices in high power and harsh environmental conditions.

APPLIED PHYSICS LETTERS (2023)

Article Physics, Applied

Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

Md Abu Jafar Rasel, Ryan Schoell, Nahid Sultan Al-Mamun, Khalid Hattar, C. Thomas Harris, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen J. Pearton

Summary: This study investigated the effects and mechanism of IL-37 on pyroptosis in RA-FLSs induced by TNF-a. It was found that IL-37 inhibited inflammation and reduced pyroptosis-related protein expression in RA-FLSs. The study also revealed that IL-37 alleviates TNF-a-induced pyroptosis in RA-FLSs by inhibiting NF-?B/GSDMD signaling.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2023)

Review Materials Science, Multidisciplinary

Review-Reliability and Degradation Mechanisms of Deep UV AlGaN LEDs

Benjamin C. Letson, John W. Conklin, Peter Wass, Simon Barke, Guido Mueller, Md Abu Jafar Rasel, Aman Haque, Stephen J. Pearton, Fan Ren

Summary: There are various applications for deep UV AlGaN Light-Emitting Diodes (LEDs), including virus inactivation, air and water purification, sterilization, bioagent detection, and UV polymer curing. The long-term stability of these LEDs is important for space missions such as the Laser Interferometer Space Antenna (LISA). The literature review shows that the decline in output power of these LEDs over extended operating times is mainly driven by current and temperature, with the degradation rate dependent on the cube of drive current density and exponentially on temperature. The main mechanism for this decline is believed to be the creation/migration of point defects. Pre-screening based on the ratio of band edge-to-midgap emission and LED ideality factor can identify devices with long lifetimes (>10,000 h).

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2023)

Article Crystallography

Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage > 8 kV

Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Xinyi Xia, Timothy Jinsoo Yoo, Honggyu Kim, Fan Ren, Stephen J. Pearton

Summary: Vertical heterojunction rectifiers with p-type NiO and thick Ga2O3 drift layers grown on Sn-doped β-Ga2O3 substrates exhibited breakdown voltages > 8 kV. Low drift doping concentration, low power during NiO deposition, and the formation of a guard ring were key factors for achieving excellent performance. These results demonstrate the potential of NiO/Ga2O3 rectifiers beyond SiC and GaN.

CRYSTALS (2023)

Article Engineering, Electrical & Electronic

Rapid detection of radiation susceptible regions in electronics

Sergei P. Stepanoff, Aman Haque, Fan Ren, Stephen Pearton, Douglas E. Wolfe

Summary: The susceptibility of electronics to radiation increases as the size and complexity of electronic chips or systems increase. This study develops an indirect technique to identify radiation-susceptible regions and demonstrates its effectiveness in rapid detection.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2023)

Article Chemistry, Physical

Ion energy dependence of dry etch damage depth in Ga2O3 Schottky rectifiers

Chao-Ching Chiang, Xinyi Xia, Jian-Sian Li, Fan Ren, S. J. Pearton

Summary: The 8-polytype of Ga2O3 is a promising material for next generation power electronics and solar-blind UV photodetectors due to its high critical electric field strength and ability to be grown as large diameter single crystals. Dry etching is being focused on for patterning such devices, but it may cause surface modification and damage to the material. This study demonstrates that dry etch damage in 8-Ga2O3 leads to a reduction in near-surface carrier concentration, affecting device parameters like on-state resistance and introducing trap-assisted space-charge-limited conduction in the damaged layers.

APPLIED SURFACE SCIENCE (2023)

Article Materials Science, Multidisciplinary

Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga2O3 Heterojunction Rectifiers and Ni/Au/Ga2O3 Schottky Rectifiers

Jian-Sian Li, Xinyi Xia, Chao-Ching Chiang, Hsiao-Hsuan Wan, Fan Ren, Jihyun Kim, S. J. Pearton

Summary: Neutrons generated by charge-exchange reactions were used to irradiate Schottky Ga2O3 rectifiers and NiO/Ga2O3 p-n heterojunction rectifiers. The breakdown voltage was improved for Schottky rectifiers but highly degraded for their NiO/Ga2O3 counterparts. The switching characteristics were degraded for both types of devices after irradiation.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2023)

Article Materials Science, Multidisciplinary

1 mm(2), 3.6 kV, 4.8 A NiO/Ga2O3 Heterojunction Rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton

Summary: Large area vertical NiO/β n-Ga2O/n(+) Ga2O3 heterojunction rectifiers with high breakdown voltage (3.6 kV) and large conducting currents (4.8 A) are demonstrated. The performance exceeds the unipolar 1D limit for GaN, indicating the potential of β-Ga2O3 for future high-power rectification devices. The breakdown voltage is strongly dependent on the carrier concentration in the drift region.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2023)

Article Crystallography

Annealing Stability of NiO/Ga2O3 Vertical Heterojunction Rectifiers

Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton

Summary: The stability of vertical geometry NiO/Ga2O3 rectifiers was examined under two types of annealing. It was found that annealing at 300 degrees C resulted in the best performance, including maximizing breakdown voltage and on-off ratio, lowering forward turn-on voltage, reducing reverse leakage current, and maintaining on resistance. The surface morphology remained smooth and the NiO exhibited a bandgap of 3.84 eV with an almost unity Ni2O3/NiO composition.

CRYSTALS (2023)

Article Crystallography

The Optimization of NiO Doping, Thickness, and Extension in kV-Class NiO/Ga2O3 Vertical Rectifiers

Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton

Summary: Ga2O3 heterojunction rectifiers with NiO as the solution on the p-type side have become a novel candidate for power conversion applications. In this study, the optimized design of high-breakdown NiO/Ga2O3 rectifiers was examined using the Silvaco TCAD simulator to determine the electric field distribution. The doping concentration, guard ring thickness, and extension beyond the anode were all important factors in determining the breakdown location. The transition phenomenon from the edge of the NiO extension to the top contact periphery was found to be correlated with the depletion effect.

CRYSTALS (2023)

Article Materials Science, Multidisciplinary

Superior high temperature performance of 8 kV NiO/Ga2O3 vertical heterojunction rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton

Summary: NiO/β-Ga2O3 vertical rectifiers show near-temperature-independent breakdown voltages (V-B) of >8 kV at 600 K. The power figure of merit (V-B)²/R-ON for 100 μm diameter devices is 9.1 GW cm(-2) at 300 K and 3.9 GW cm(-2) at 600 K. In contrast, Schottky rectifiers on the same wafers have V-B of about 1100 V at 300 K with a negative temperature coefficient of breakdown. The power figure of merit for Schottky rectifiers is much lower compared to the heterojunction rectifiers. The results demonstrate the potential of using transparent oxide heterojunctions for high temperature, high voltage applications.

JOURNAL OF MATERIALS CHEMISTRY C (2023)

Review Engineering, Electrical & Electronic

Radiation damage in GaN/AlGaN and SiC electronic and photonic devices

S. J. Pearton, Xinyi Xia, Fan Ren, Md Abu Jafar Rasel, Sergei Stepanoff, Nahid Al-Mamun, Aman Haque, Douglas E. Wolfe

Summary: Wide bandgap semiconductors SiC and GaN are used in power electronics and light-emitting diodes. They have higher radiation hardness compared to Si devices due to larger threshold energies for creating defects and high rates of defect recombination. However, heavy-ion-induced catastrophic burnout commonly occurs in SiC and GaN power devices. Light-emitting devices are not affected by this mechanism. Strain has also been identified as a parameter affecting radiation susceptibility of wide bandgap devices.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2023)

Article Engineering, Electrical & Electronic

E-mode AlGaN/GaN HEMTs using p-NiO gates

Chao-Ching Chiang, Hsiao-Hsuan Wan, Jian-Sian Li, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, S. J. Pearton

Summary: Sputtered p-NiO films were used to suppress gate leakage and produce a positive shift in the gate voltage of AlGaN/GaN high-electron mobility transistors for e-mode operation. The utility of NiO gates in increasing the on-off ratio and shifting the threshold voltage in comparison to Schottky gates was demonstrated.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2023)

暂无数据