4.6 Article

Formation of a built-in field at the porphyrin/ITO interface directly proven by the time-resolved photovoltage technique

期刊

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 17, 期 7, 页码 5202-5206

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c4cp05166a

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资金

  1. National Basic Research Program of China [2013CB934102, 2011CB808703]
  2. National Natural Science Foundation of China [21201121, 21301116, 21331004]

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Two assemblies, porphyrin powder/ITO and porphyrin film/ITO, were built by a facile method. The time-resolved photovoltage technique was utilized to prove the behaviour of photo-induced charges in the two assemblies. The photovoltage results show that the porphyrin film/ITO assembly displays a reversal polarity response, which is different from the response of porphyrin powder/ITO. This phenomenon is due to the effect of a built-in field on photo-induced charge behaviour at the porphyrin film/ITO interface. This result is beneficial for the development of a measuring method for detecting heterojunction interface formation and understanding the photoelectric process in photoelectric materials and devices.

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