Phase stability and Raman vibration of the molybdenum ditelluride (MoTe2) monolayer

Field-Effect Transistors Based on Few-Layered α-MoTe2

(2014) Nihar R. Pradhan et al.   ACS Nano

Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2

(2014) Mahito Yamamoto et al.   ACS Nano

Ambipolar MoTe2Transistors and Their Applications in Logic Circuits

(2014) Yen-Fu Lin et al.   ADVANCED MATERIALS

Plasmonic Hot Electron Induced Structural Phase Transition in a MoS2Monolayer

(2014) Yimin Kang et al.   ADVANCED MATERIALS

Exfoliated multilayer MoTe2 field-effect transistors

(2014) S. Fathipour et al.   APPLIED PHYSICS LETTERS

Structures and Phase Transition of a MoS2 Monolayer

(2014) M. Kan et al.   Journal of Physical Chemistry C

Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

(2014) Claudia Ruppert et al.   NANO LETTERS

A density functional theory study of the tunable structure, magnetism and metal-insulator phase transition in VS2 monolayers induced by in-plane biaxial strain

(2014) Min Kan et al.   Nano Research

Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2

(2014) Yung-Chang Lin et al.   Nature Nanotechnology

Emergence of Ferroelectricity at a Metal-Semiconductor Transition in a1TMonolayer ofMoS2

(2014) Sharmila N. Shirodkar et al.   PHYSICAL REVIEW LETTERS

Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers

(2014) Karel-Alexander N. Duerloo et al.   Nature Communications

Surface transport and band gap structure of exfoliated 2H-MoTe2crystals

(2014) Ignacio Gutiérrez Lezama et al.   2D Materials

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

(2013) Manish Chhowalla et al.   Nature Chemistry

Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2

(2012) Goki Eda et al.   ACS Nano

Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure

(2012) C. Ataca et al.   Journal of Physical Chemistry C

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Valley polarization in MoS2 monolayers by optical pumping

(2012) Hualing Zeng et al.   Nature Nanotechnology

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2from first principles

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

(2012) Di Xiao et al.   PHYSICAL REVIEW LETTERS

MoS2Nanoplates Consisting of Disordered Graphene-like Layers for High Rate Lithium Battery Anode Materials

(2011) Haesuk Hwang et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Frictional Characteristics of Atomically Thin Sheets

(2010) C. Lee et al.   SCIENCE

Structure of chemically derived mono- and few-atomic-layer boron nitride sheets

(2008) Wei-Qiang Han et al.   APPLIED PHYSICS LETTERS

First-principles calculations of the ferroelastic transition between rutile-type andCaCl2-typeSiO2at high pressures

(2008) Atsushi Togo et al.   PHYSICAL REVIEW B