Sulfur doping of AlN and AlGaN for improved n-type conductivity

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

(2014) J. L. Lyons et al.   PHYSICAL REVIEW B

Hybrid functional calculations ofDXcenters in AlN and GaN

(2014) L. Gordon et al.   PHYSICAL REVIEW B

First-principles calculations for point defects in solids

(2014) Christoph Freysoldt et al.   REVIEWS OF MODERN PHYSICS

The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes

(2012) Roy B. Chung et al.   APPLIED PHYSICS LETTERS

Shallow donor and DX states of Si in AlN

(2011) N. T. Son et al.   APPLIED PHYSICS LETTERS

Investigation on AlN epitaxial growth and related etching phenomenon at high temperature using high temperature chemical vapor deposition process

(2011) A. Claudel et al.   JOURNAL OF CRYSTAL GROWTH

Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions

(2010) Luke Gordon et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electrostatic interactions between charged defects in supercells

(2010) Christoph Freysoldt et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

FullyAb InitioFinite-Size Corrections for Charged-Defect Supercell Calculations

(2009) Christoph Freysoldt et al.   PHYSICAL REVIEW LETTERS