期刊
JOURNAL OF NON-CRYSTALLINE SOLIDS
卷 354, 期 19-25, 页码 2585-2589出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnoncrysol.2007.09.094
关键词
silicon; nanocrystals; sensors; conductivity; chemical vapor deposition; microcrystallinity
One common complication following total-hip-replacement arthroplasty - one of the most performed elective surgical procedures - is the loosening of the prosthetic stem and cup, responsible for more than 80% of non-successes. A combination of piezoelectric and piezoresistive materials in a sensing device for dynamical and quasi-static analysis of the implant internal environment is envisaged by the authors. In this paper, thin-film piezoresistive millimeter-long strain sensors fabricated on flexible plastic substrates using n- and p-type hydrogenated nanocrystalline silicon films with gauge factor GF similar to -30 and +20, respectively, are reported. A maximal value of GF = -43 is theoretically predicted for isotropic n-type multicrystalline Si. A sensor consists of an array of piezoresistors, each connected to a Wheatstone bridge-type external circuit, and to the control electronics. A sensitivity of 30 mV/mu m was achieved in sensors bearing both longitudinal and transverse orientations of the resistors relative to the strain direction. Used as a shape sensor the device was able to map the contour of the hip implant. Cell growth tests show that osteoblasts grow faster on P-doped nc-Si:H thin films than on the control sample. Genotoxicity tests show that cell DNA is preserved if cultured in contact with n-type nanocrystalline silicon. (C) 2008 Elsevier B.V. All rights reserved.
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