4.7 Article

Continuous Postnatal Neurogenesis Contributes to Formation of the Olfactory Bulb Neural Circuits and Flexible Olfactory Associative Learning

期刊

JOURNAL OF NEUROSCIENCE
卷 34, 期 17, 页码 5788-5799

出版社

SOC NEUROSCIENCE
DOI: 10.1523/JNEUROSCI.0674-14.2014

关键词

dentate gyrus; hippocampus; learning; neural stem cells; neurogenesis; olfactory bulb

资金

  1. Ministry of Education, Culture, Sports, Science and the Technology of Japan
  2. Japan Science and Technology Agency research grants
  3. Japan Society for the Promotion of Science for Young Scientists research fellowships
  4. Japan Science and Technology Agency Precursory Research for Embryonic Science and Technology program
  5. Mitsubishi Foundation
  6. Grants-in-Aid for Scientific Research [24680035, 23240046] Funding Source: KAKEN

向作者/读者索取更多资源

The olfactory bulb (OB) is one of the two major loci in the mammalian brain where newborn neurons are constantly integrated into the neural circuit during postnatal life. Newborn neurons are generated from neural stem cells in the subventricular zone (SVZ) of the lateral ventricle and migrate to the OB through the rostral migratory stream. The majority of these newborn neurons differentiate into inhibitory interneurons, such as granule cells and periglomerular cells. It has been reported that prolonged supply of newborn neurons leads to continuous addition/turnover of the interneuronal populations and contributes to functional integrity of the OB circuit. However, it is not still clear how and to what extent postnatal-born neurons contribute to OB neural circuit formation, and the functional role of postnatal neurogenesis in odor-related behaviors remains elusive. To address this question, here by using genetic strategies, we first determined the unique integration mode of newly born interneurons during postnatal development of the mouse OB. We then manipulated these interneuron populations and found that continuous postnatal neurogenesis in the SVZ-OB plays pivotal roles in flexible olfactory associative learning and memory.

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