期刊
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 14, 期 12, 页码 9065-9072出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2014.10098
关键词
Graphene; Plasma Enhanced Chemical Vapor Deposition (PECVD)
类别
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2011-0006268, 2011-0012279]
- MICE (The Ministry of Knowledge Economy), Korea, under the ITRC (Information Technology Research Center)) support program [NIPA-2012-H0301-12-4013]
- National Research Foundation of Korea [2011-0012279] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Low-temperature graphene was synthesized at 400 degrees C with inductively coupled plasma chemical vapor deposition (PECVD) process. The effects of plasma power and flow rate of various carbon containing precursors and hydrogen on graphene properties were investigated with optical emission spectroscopy (OES). Various radicals monitored by OES were correlated with graphene film properties such as sheet resistance, I-D/I-G ratio of Raman spectra and transparency. C2H2 was used as a main precursor and the increase of plasma power enhanced intensity of carbon (C-2) radical OES intensity in plasma, reduced sheet resistance and increased transparency of graphene films. The reduced flow rate of C2H2 decreased sheet resistance and increased transparency of graphene films in the range of this study. H-2 addition was found to increase sheet resistance, transparency and attributed to reduction of graphene grain and etching graphene layers. OES analysis showed that C-2 radicals contribute to graphite networking and sheet resistance reduction. TEM and AFM were applied to provide credible information that graphene had been successfully grown at low temperature.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据