期刊
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 14, 期 4, 页码 2792-2798出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2014.8636
关键词
Memristor; Atomic Switch; Self-Assembly; Electroless Deposition; Networks
类别
资金
- Ministry of Education, Culture, Sports, Science, and Technology (MEXT) World Premier International (WPI) Research Center for Materials Nanoarchitectonics (MANA)
- HRL Laboratories
- Defense Advanced Research Projects Agency (DARPA)-Physical Intelligence Program [BAA-09-63]
- US Department of Defense
Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive switching circuits comprising highly interconnected fractal electrodes and metal-insulator-metal interfaces, known as atomic switch networks, have been fabricated using simple benchtop techniques including solution-phase electroless deposition. These devices are shown to activate through a bias-induced forming step that produces the frequency dependent, nonlinear hysteretic switching expected for gapless-type atomic switches and memristors. By eliminating the need for complex lithographic methods, such an approach toward device fabrication provides a more accessible platform for the study of ionic resistive switches and memristive systems.
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