4.2 Article

Temperature Dependence of the Giant Magnetoresistance in Fe/DNA/Fe Structure

期刊

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 11, 期 10, 页码 8943-8946

出版社

AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2011.3485

关键词

GMR; Spin-Dependent Transport; DNA; Green's Function Technique; Spintronics

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A numerical study is presented to investigate the spin-dependent transport through poly(dG)-poly(dC) DNA molecule sar dwiched between ferromagnetic contacts in the absence and in the presence of environmental effects. Making use of tight-binding procedure and within the framework of a generalized Green's function technique, the room temperature current voltage characteristics of DNA molecule and the grant magnetoresistance (GMR) of Electrode/DNA/Electrode structure, with iron (Fe) as the electrode are studied. It is found that the GMR to be lower than 12% for small applied bias and about 35% for applied bias larger than 2.5 volts. Considering the environmental effects, the GMR would be increased up to 13% at a bias lower than 2 volts and decreases up to 23% for the bias about 2.5 volts. In addition, our calculations indicate that for applied biases around 2.5 volts, the GMR decreases when the temperature increased.

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