期刊
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
卷 10, 期 10, 页码 6789-6793出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2010.2965
关键词
Conjugated Polymer Blends; Organic Light-Emitting Transistors; Ambipolar
类别
资金
- Korea Evaluation Institute of Industrial Technology (KEIT) [2008-N-PV08-J-01] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2009-0083009, 2007-331-D00121, 2009-0093819] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Here we report the effect of thermal annealing time on the performance of ambipolar organic light-emitting transistors (OLETs) made using conjugated polymer blends. Regioregular poly(3-hexylthiophene) (P3HT) and poly(9,9-dioctylfluorenyl-2,3-diyl-co-1,4-benzo-2,1',3-thiadiazole) (F8BT) were chosen as a p-type and a n-type component, respectively. As a gate insulator, poly(4,4'-oxydiphenylene-pyromellitimide) (PMDA-ODA PI) was employed due to its high solvent resistance and thermal stability. Results showed that the present OLETs exhibited ambipolar characteristics even after thermal annealing. All devices showed almost identical field-effect mobility for both holes and electrons. The highest field-effect mobility was achieved for the OLET annealed at 130 degrees C for 60 min, which was assigned to the improved polymer-metal contact by thermal annealing leading to better charge injection.
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