Article
Nanoscience & Nanotechnology
Omar Saket, Junkang Wang, Nuno Amador-Mendez, Martina Morassi, Arup Kunti, Fabien Bayle, Stephane Collin, Arnaud Jollivet, Andrey Babichev, Tanbir Sodhi, Jean-Christophe Harmand, Francois H. Julien, Noelle Gogneau, Maria Tchernycheva
Summary: In this study, the electrical and optical properties of single GaN nanowire p-n junctions grown by plasma-assisted molecular-beam epitaxy using magnesium and silicon as doping sources were analyzed. The results showed that parasitic radial growth enhanced by magnesium doping led to fluctuations in the junction position and shape, while reverting the doping order resulted in a more stable structure and better optical quality. Additionally, a high hole concentration in the p-doped segment was achieved without degrading the nanowire morphology.
Article
Nanoscience & Nanotechnology
Capucine Tong, Thomas Bidaud, Eero Koivusalo, Marcelo Rizzo Piton, Mircea Guina, Helder Vinicius Avanco Galeti, Yara Galvao Gobato, Andrea Cattoni, Teemu Hakkarainen, Stephane Collin
Summary: Cathodoluminescence mapping is utilized to investigate the electron concentration gradient of Te-doped GaAs nanowires, revealing distinct electron concentration levels and gradients in nanowires grown at different temperatures.
Article
Chemistry, Multidisciplinary
Priyanka Ramaswamy, Kendall Dawkins, Hirandeep Kuchoor, Rabin Pokharel, Jia Li, Shanthi Iyer
Summary: In this paper, high-performance self-assisted molecular beam epitaxy (MBE)-grown conventional core-shell (C-S) n-i-p GaAsSb nanowires (NWs) and a novel hybrid axial C-S n-i-p GaAsSb ensemble NW-based near-infrared photodetector (NIRPD) on nonpatterned Si substrate are demonstrated. The conventional C-S n-i-p GaAsSb NW exhibits a high responsivity and detectivity, while the hybrid axial C-S n-i-p GaAsSb has band-gap-engineered for a longer wavelength. The findings suggest the potential of the hybrid axial C-S NW architecture in expanding the applications of IRPD and other optoelectronic devices.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Nanoscience & Nanotechnology
Daya S. Dhungana, Nicolas Mallet, Pier-Francesco Fazzini, Guilhem Larrieu, Fuccio Cristiano, Sebastien R. Plissard
Summary: Integrating self-catalyzed InAs nanowires on Si(111) is a crucial step towards building vertical gate-all-around transistors. By optimizing the nanowire morphology and changing the growth mode, and transferring it to patterned wafers, we propose a method for large-scale integration of CMOS compatible InAs nanowire on silicon.
Article
Chemistry, Multidisciplinary
Man Suk Song, Tom Koren, Magdalena Zaluska-Kotur, Ryszard Buczko, Nurit Avraham, Perla Kacman, Hadas Shtrikman, Haim Beidenkopf
Summary: In this study, a unique structure of tapered nanowires was characterized and found to serve as a platform for one-dimensional topological superconductivity. The tapered nanowires gradually converge into a very thin square tip, potentially offering advantages for the realization and manipulation of Majorana zero modes.
Article
Materials Science, Multidisciplinary
Saad Rasheed, Muhammad Usman, Laraib Mustafa, Shazma Ali
Summary: We conducted numerical investigations on AlGaN-based UV LEDs and found that the unequal carrier distribution in III-N LEDs is mitigated in the active region. To improve performance, a thin AlInGaN quaternary layer (QL) was used between the final quantum barrier (FQB) and the electron blocking layer (EBL). We compared the results with a staggered or step-graded electron blocking layer known for enhanced device output and found a significant improvement in hole insertion in all the MQWs of our numerically designed LEDs. The radiative recombination rate was enhanced by approximately 82% compared to the reference LED.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2023)
Article
Chemistry, Multidisciplinary
Dawid Jarosz, Marcin Stachowicz, Piotr Krzeminski, Marta Ruszala, Anna Jus, Pawel Sliz, Dariusz Ploch, Michal Marchewka
Summary: This study presents the process of pre-optimization of growth parameters for homoepitaxial GaAs layers after servicing and restarting the MBE system. It analyzes how each step of reestablishing optimal growth condition influences various characteristics of obtained GaAs layers. Additionally, it compares the differences in optimal conditions for the growth of homoepitaxial GaAs layers from two growth campaigns.
Article
Chemistry, Physical
Badal Mondal, Julia Westermayr, Ralf Tonner-Zech
Summary: In this study, a combination of accurate first-principles calculations and machine learning approaches is used to predict the bandgap properties of quaternary III-V semiconductors. This method enables efficient prediction of various materials under different strains, offering the possibility of virtual screening for optoelectronic applications of multinary III-V materials.
JOURNAL OF CHEMICAL PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Sander G. Schellingerhout, Eline J. de Jong, Maksim Gomanko, Xin Guan, Yifan Jiang, Max S. M. Hoskam, Jason Jung, Sebastian Koelling, Oussama Moutanabbir, Marcel A. Verheijen, Sergey M. Frolov, Erik P. A. M. Bakkers
Summary: Advances in quantum technology may be achieved through the discovery of new materials systems that improve electronic device performance or enable new functionalities. In this study, PbTe nanowires were fabricated using molecular beam epitaxy, and their suitability for quantum devices was observed.
MATERIALS FOR QUANTUM TECHNOLOGY
(2022)
Article
Chemistry, Multidisciplinary
Baodan Liu, Zongyi Ma, Cai Zhang, Yonghui Ma, Liu Yang, Wenjin Yang, Jing Li, Xinglai Zhang
Summary: This study discusses the simultaneous nucleation and growth of horizontal nonpolar nanowires and vertical polar nanorods on GaN substrate, emphasizing the importance of the initial premature nucleus for this process. Microstructure analysis and cathodoluminescence characterization confirm the crystalline nature and single-peak luminescence emission in the visible range of the nanostructures.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Materials Science, Multidisciplinary
Ye Li, Miaoling Cai, Mengling Shen, Yuting Cai, Rong-Jun Xie
Summary: A new ligand strategy was employed to prepare highly stable and optically efficient perovskite nanocrystals.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Materials Science, Multidisciplinary
Maria Hilse, Ke Wang, Roman Engel-Herbert
Summary: We studied the structural properties of co-deposited ultrathin PtSe2 films grown at low temperatures on c-plane Al2O3 using molecular beam epitaxy. By simultaneously supplying Se flux and Pt atoms, crystalline PtSe2 films were formed at optimum deposition temperatures. Postgrowth annealing under a Se flux significantly improved the crystalline quality of the films. The deposition process resulted in single layer islands that transitioned to a two-dimensional layered structure after annealing.
Article
Optics
Zheng Da-Nong, Su Xiang-Bin, Xu Ying-Qiang, Niu Zhi-Chuan
Summary: In this study, high-quality avalanche photodiodes (APDs) were fabricated using a GaSb-based AlInAsSb quaternary digital alloy grown by molecular beam epitaxy (MBE). The use of a digital alloy technique with migration-enhanced epitaxy growth method resulted in sharp satellite peaks and perfect lattice matching, leading to high performance APDs with low dark current density and high stable gain.
JOURNAL OF INFRARED AND MILLIMETER WAVES
(2021)
Article
Chemistry, Physical
Shisir Devkota, Mehul Parakh, Priyanka Ramaswamy, Hirandeep Kuchoor, Aubrey Penn, Lewis Reynolds, Shanthi Iyer
Summary: This study investigates the effects of arsenic flux during gallium seed droplet consumption and post-growth annealing on the properties of tellurium-doped GaAs nanowires. It found that adjusting the flux can impact stacking faults, photoluminescence intensity, and photocurrent. Post-growth annealing introduces a low-energy PL peak attributed to a complex acceptor state, which also negatively affects electrical properties. Careful parameter control is crucial for high-quality Te-doped nanowire growth.
Article
Chemistry, Physical
HyoChang Jang, Katsuhiko Saito, Qixin Guo, Kin Man Yu, Wladek Walukiewicz, Tooru Tanaka
Summary: ZnCdO thin films with a range of Cd compositions were grown on MgO substrates by molecular beam epitaxy, showing different phases depending on the Cd composition and a phase transition within a mixed phase region. The films exhibited varying optical band gap energies and significant electrical properties, including high carrier concentration, low resistivity, and high mobility on RS-ZnCdO thin films.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Computer Science, Information Systems
Wei-Lun Huang, Sheng-Po Chang, Cheng-Hao Li, Shoou-Jinn Chang
Summary: The research has shown that AGZO photo thin film transistors have high transparency and adjustable bandgap, excellent performance, and are suitable for solar-blind applications.
Article
Materials Science, Multidisciplinary
Sheng-Po Chang, Tzu-Hsin Chen, Guan-Yuan Liou, Wei-Lun Huang, Wei-Chih Lai, Shoou-Jinn Chang, Jone F. Chen
Summary: The research revealed that the dark current of MoS2 photodetectors increases with the number of layers, with the three-layer detector exhibiting the highest response. In terms of MoS2 EGFET pH sensors, FSS performed better on Si substrate with 200 nm SiO2. Time-dependent response measurements showed that the two-layer MoS2 EGFET pH sensors had fast and stable response, indicating good reliability.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Materials Science, Multidisciplinary
Sheng-Po Chang, Wei-De Chen, Wei-Lun Huang
Summary: In this study, MgIn2O4 UV photodetectors were fabricated using RF sputtering, showing the best performance with oxygen flow ratio of 2% and post-annealing at 300 degrees C. This device exhibits enhanced UV absorption, extremely low dark current, and high photo-to-dark current ratio.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Chemistry, Multidisciplinary
Wei-Lun Huang, Yong-Zhe Lin, Sheng-Po Chang, Wei-Chih Lai, Shoou-Jinn Chang
Summary: This study enhances the performance and stability of RRAM by designing a stacked InxGa1-xO structure as its switching layer and adjusting the concentration of oxygen vacancies through different compositions of elements.
Article
Materials Science, Multidisciplinary
Jia-Cheng Jian, Yu-Chi Chang, Sheng-Po Chang, Shoou-Jinn Chang
Summary: A novel gas sensor device based on apple pectin film doped with NiO was fabricated for the first time using a solution processing technique and annealed in a microwave chamber. The device showed superior sensing performance towards ethanol gas compared to pure apple pectin film sensor, with a response time of 1.379 s at an operational temperature of 250 degrees C for a 10 ppm concentration of ethanol gas. The sensing mechanism for the sensor device was also described thoroughly.
Article
Materials Science, Multidisciplinary
Sheng-Po Chang, Ren-Hao Yang, Chih-Hung Lin
Summary: InTiZnO gas sensors fabricated by RF sputtering at different oxygen ratios exhibited high sensing responses, selectivity, and repeatability for various gases. UV light activation reduced the operating temperature without damaging the sensing film, showing long-term stability and potential for gas sensing technology.
Article
Engineering, Chemical
Tien-Yu Wang, Wei-Chih Lai, Syuan-Yu Sie, Sheng-Po Chang, Cheng-Huang Kuo, Jinn-Kong Sheu
Summary: The introduction of p-AlGaN/AlGaN superlattice (SL) hole injection structure can enhance the performance of deep ultraviolet (DUV) light-emitting diodes (LEDs), resulting in reduced forward voltage and improved light output power.
Article
Materials Science, Multidisciplinary
Chih-Chiang Yang, Yun-Ting Tsai, Hao-Lin Hsu, Sheng-Po Chang, Yan-Kuin Su
Summary: Electronics based on natural materials have the advantages of simple preparation procedures, low cost, ecofriendliness, and biocompatibility. In this study, a silver-doped citrus pectin material was synthesized, and a RRAM device was fabricated using a simple fabrication method. The results showed that the 10% silver-doped device exhibited excellent stability and reliability, and could achieve multilevel storage in a single device.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2022)
Article
Chemistry, Multidisciplinary
Yong-Tang Zeng, Zhan-Rong Li, Sheng-Po Chang, Arjun Ansay, Zi-Hao Wang, Chun-Yuan Huang
Summary: This study demonstrates a facile synthesis method for highly luminescent Zn-doped CsPbBr3 perovskite nanocrystals. The doping of Zn significantly enhances the photoluminescence quantum yield, spectral properties, and stability of the nanocrystals, making them a promising candidate for practical optoelectronic devices.
Article
Chemistry, Multidisciplinary
Tien-Yu Wang, Wei-Chih Lai, Syuan-Yu Sie, Sheng-Po Chang, Cheng-Huang Kuo, Jinn-Kong Sheu, Jong-Shing Bow
Summary: AlGaN and GaN sidewalls were thermally oxidized to improve the optoelectronic characteristics of deep ultraviolet LEDs. The thermally oxidized AlxGa2-xO3 sidewall significantly enhanced light extraction efficiency and increased the light output power.
Article
Engineering, Electrical & Electronic
Shu-Bai Liu, Chia-Hsun Chen, Sheng-Po Chang, Chen-Hao Li, Shoou-Jinn Chang
Summary: In this study, extended gate field-effect transistor (EGFET) pH sensors with aluminum-gallium-zinc-oxide (AGZO) sensing film were fabricated using radio frequency (RF) cosputtering method. The pH sensitivity of the sensors was found to increase with the AGO:ZnO power ratio, reaching the highest value at AGO:ZnO ratio of 80W:50W. Furthermore, it was observed that the carrier transport improved by ZnO and the increased surface roughness contributed to the enhanced pH sensitivity.
IEEE SENSORS JOURNAL
(2022)
Article
Chemistry, Multidisciplinary
Yu-Neng Kao, Wei-Lun Huang, Sheng-Po Chang, Wei-Chih Lai, Shoou-Jinn Chang
Summary: Different oxygen partial-pressure MgGa2O4-resistive RAMs (RRAMs) were investigated for their resistive switching behaviors. By changing the fabrication conditions of the RS layer, the resistive switching characteristics of MgGa2O4 RRAM were significantly improved. A filament model was used to explain the mechanism of conductive filament generation and rupture. The high resistance state (HRS) was explained by the formation of the interfacial layer (AlOx) and the Joule heating effect. The low resistance state (LRS) and HRS corresponded to ohmic conduction and space charge-limited conduction, respectively. The optimized fabrication parameters of Al/MgGa2O4/Pt RRAM showed favorable cycling endurance and retention time, making them suitable for nonvolatile memristors and information security applications.
Article
Engineering, Electrical & Electronic
Jia-Cheng Jian, Yu-Chi Chang, Deng-Kai Chang, Sheng-Po Chang, Shoou-Jinn Chang
Summary: In this study, spherical-like ZnO UV photodetectors were synthesized using a facile hydrothermal method in the presence of different concentrations of apple pectin as a biotemplate. The addition of apple pectin not only modified the surface morphology but also improved the absorption properties and reduced the dark current. The best performance was achieved with the addition of 150 mg of apple pectin, exhibiting a high UV-to-dark current ratio and fast response and recovery times.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Multidisciplinary
Tien-Yu Wang, Wei-Chih Lai, Qiao-Ju Xie, Shun-Hao Yang, Sheng-Po Chang, Cheng-Huang Kuo, Jinn-Kong Sheu
Summary: The growth conditions of the AlGaN barrier in AlGaN/AlGaN deep ultra-violet (DUV) multiple quantum wells (MQWs) play a crucial role in the light output power of DUV light-emitting diodes (LEDs). Reducing the growth rate of the AlGaN barrier improves the quality of AlGaN/AlGaN MQWs, including surface roughness and defects. The light output power can be enhanced by up to 83% by lowering the growth rate from 900 nm h(-1) to 200 nm h(-1). Additionally, the altered growth rate affects the far-field emission patterns and polarization degree of the DUV LEDs, indicating a modification in the strain of the AlGaN/AlGaN MQWs.
Article
Engineering, Electrical & Electronic
Wei-Han Chen, Chun-Hao Ma, Shang-Hsien Hsieh, Yu-Hong Lai, Yen-Chien Kuo, Chia-Hao Chen, Sheng-Po Chang, Shoou-Jinn Chang, Ray-Hua Horng, Ying-Hao Chu
Summary: Transparent flexible deep-UV detectors based on high-quality epitaxial films on a flexible substrate have been developed in this study. The detectors show superior performance in terms of electrical current, response time, thermal stability, and mechanical flexibility.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
