期刊
JOURNAL OF NANOMATERIALS
卷 2014, 期 -, 页码 -出版社
HINDAWI LTD
DOI: 10.1155/2014/787132
关键词
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资金
- Advanced Optoelectronic Technology Center of NCKU [HUA103-3-15-051]
- National Science Council of Taiwan [NSC102-2221-E-006-259, NSC102-2221-E-230-015]
- Bureau of Energy, Ministry of Economic Affairs of Taiwan [102-E0603]
We have studied the low-frequency noise characterizations in 28-nm high-k (HK) pMOSFET with embedded SiGe source/drain (S/D) through 1/f noise and random telegraph noise measurements simultaneously. It is found that uniaxial compressive strain really existed in HK pMOSFET with embedded SiGe S/D. The compressive strain induced the decrease in the tunneling attenuation length reflecting in the oxide trap depth from Si/SiO2 interface to the HK layer, so that the oxide traps at a distance from insulator/semiconductor interface cannot capture carrier in the channel. Consequently, lower 1/f noise level in HKpMOSFET with embedded SiGe S/D is observed, thanks to the less carrier fluctuations from trapping/detrapping behaviors. This result represents an intrinsic benefit of HK pMOSFET using embedded SiGe S/D in low-frequency noise characteristics.
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