Black silicon method: X. A review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

标题
Black silicon method: X. A review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment
作者
关键词
-
出版物
JOURNAL OF MICROMECHANICS AND MICROENGINEERING
Volume 19, Issue 3, Pages 033001
出版商
IOP Publishing
发表日期
2009-02-03
DOI
10.1088/0960-1317/19/3/033001

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