期刊
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 21, 期 6, 页码 1426-1435出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2012.2206564
关键词
Complementary-metal-oxide-semiconductor (CMOS) circuitry; CMOS MEMS; electrode impedances; electrode selection; high-density electrode array; neural recording; noise; potential measurements; silicon microprobes
类别
资金
- European Commission [IST-027017]
- Hungarian Scientific Research Fund [OTKA K 81357]
- Hungarian National Office for Research and Technology (NKTH-ANR Neurogen and NKTH-ANR Multisca)
This paper reports on the characterization and intracortical recording performance of high-density complementary-metal-oxide-semiconductor (CMOS)-based silicon microprobe arrays. They comprise multiplexing units integrated on the probe shafts being part of the signal transmission path. Their electrical characterization reveals a negligible contribution on the electrode impedances of 139 +/- 11 k Omega and 1.2 +/- 0.1 M Omega and on the crosstalks of 0.12% and 0.98% for iridium oxide (IrOx) and platinum (Pt) electrodes, respectively. The power consumption of the single-shaft probe was found to be 57.5 mu W during electrode selection. The noise voltage of the switches was determined to be 5.6 nV/root Hz; it does not measurably affect the probe performance. The recording selectivity of the electrode array is demonstrated by electrical potential measurements in saline solution while injecting a stimulating current using an external probe. In-vivo recordings in anesthetized rats using all 188 electrodes with a pitch of 40.7 mu m are presented and analyzed in terms of single neural activity and signal-to-noise ratio. The concept of electronic depth control is proven by performing mechanical translation of the probe shaft while electronically switching to adjacent electrodes to compensate the mechanical shift. [2012-0027]
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