4.5 Article

Strain Effect of the Dielectric Constant in Silicon Dioxide

期刊

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 19, 期 6, 页码 1521-1523

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2010.2082500

关键词

Dielectric constant; mechanical stress; micromachining; silicon dioxide; test structure

资金

  1. High-Tech Research and Development Program [2007AA04Z306, 2009AA04Z322]
  2. National Natural Science Foundation of China [90607002]

向作者/读者索取更多资源

The effect of mechanical stress on the dielectric constant of SiO2 is experimentally studied. A beam-bending method is used to extract the strain effect coefficient M-12. According to the measurements, the dielectric constant changes linearly with the stress. The value of M-12 is shown to be -(0.19 +/- 0.01) x 10(-21) m(2)/V-2. The mechanism underlying the phenomena is discussed.

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