期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 25, 期 6, 页码 2724-2729出版社
SPRINGER
DOI: 10.1007/s10854-014-1935-x
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资金
- Department of Science and Technology (DST), India
Ag-doped titanium dioxide (TiO2) nanocrystalline thin films have been prepared by the sol-gel dip coating method and used as photoanode to fabricate quantum dot sensitized solar cells. The X-ray diffraction studies reveal the formation of anatase phase without any impurity phase. The surface morphology studied using scanning electron microscope shows uniform distribution of particles. The optical band gap was found to be 3.5 and 3.4 eV for CdS quantum dot sensitized TiO2 and CdS quantum dot sensitized Ag-doped TiO2 thin film respectively. The Ag-doped TiO2 based solar cell exhibited a power conversion efficiency of 1.48 % which is higher than that of TiO2 (0.9 %).
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