期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 23, 期 2, 页码 418-424出版社
SPRINGER
DOI: 10.1007/s10854-011-0490-y
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资金
- National Science Council of the Republic of China [NSC 99-2221-E-036-004]
- Tatung University [B99-O05-054]
The influence of fabrication parameters on ZnO film properties has been analyzed through conducting several experiment processes to develop an appropriate deposition condition for obtaining highly c-axis textured films. A transducer with the structure of Al/ZnO/Al/Si was fabricated at low deposition rate and under a temperature of 380 A degrees C in a mixture of gases Ar:O-2 = 1:3, and RF power of 178 W. Pt/Ti was employed as the bottom electrode of the transducer fabricated in a suitable substrate temperature, which starts increasing at 380 A degrees C with an increment of 20 A degrees C for each 2 h stage of the deposition. Highly c-axis textured ZnO films have been successfully deposited on Pt/Ti/SiO2/Si substrate under feasible conditions, including RF power of 178 W, substrate temperature of 380 A degrees C, deposition pressure of 1.3 Pa and Ar:O-2 gas flow ratio of 50%. These conditions have been proposed and confirmed through investigating the influences of the sputtering parameters, such as substrate temperature, RF power and Ar:O-2 gas flow ratio, on the properties of ZnO films.
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