4.5 Article

Synthesis and characterization of band gap-reduced ZnO:N and ZnO:(Al,N) films for photoelectrochemical water splitting

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JOURNAL OF MATERIALS RESEARCH
卷 25, 期 1, 页码 69-75

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CAMBRIDGE UNIV PRESS
DOI: 10.1557/JMR.2010.0017

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  1. U.S. Department of Energy [DE-AC36-08GO28308]

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ZnO thin films with significantly reduced band gaps were synthesized by doping N and codoping Al and N at 100 degrees C. All the films were synthesized by radiofrequency magnetron sputtering on F-doped tin-oxide-coated glass. We found that codoped ZnO:(Al,N) thin films exhibited significantly enhanced crystallinity compared with ZnO doped solely with N, ZnO:N, at the same growth conditions. Furthermore, annealed ZnO:(Al,N) thin films exhibited enhanced N incorporation over ZnO:N films. As a result, ZnO:(Al,N) films exhibited better photocurrents than ZnO:N films grown with pure N doping, suggesting that charge-compensated donor-acceptor codoping could be a potential method for band gap reduction of wide-band gap oxide materials to improve their photoelectrochemical performance.

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