Tuning the indirect–direct band gap transition of SiC, GeC and SnC monolayer in a graphene-like honeycomb structure by strain engineering: a quasiparticle GW study
出版年份 2012 全文链接
标题
Tuning the indirect–direct band gap transition of SiC, GeC and SnC monolayer in a graphene-like honeycomb structure by strain engineering: a quasiparticle GW study
作者
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出版物
JOURNAL OF MATERIALS CHEMISTRY
Volume 22, Issue 19, Pages 10062
出版商
Royal Society of Chemistry (RSC)
发表日期
2012-03-24
DOI
10.1039/c2jm30915g
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